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Composite Transistors
UP04210/4211/4213/4214/4215/4216
Silicon NPN epitaxial planar transistor
For switching/digital circuits Features
* Two elements incorporated into one package (Transistors with built-in resistor) * Reduction of the mounting area and assembly cost by one half
1 2 3 (0.50)(0.50) 1.000.05 1.600.05 (0.30) 6 5 4 0.20+0.05 -0.02
Unit: mm
0.100.02
1.200.05
1.600.05
5
Display at No.1 lead
* UP04210 * UP04211 * UP04213 * UP04214 * UP04215 * UP04216
Marking symbol (R1) 8Z 47 k 9V 10 k 8S 47 k BR 10 k 8T 10 k 8U 4.7 k
(R2) 10 k 47 k 47 k
1: Emitter (Tr1) 2: Base (Tr1) 3: Collector (Tr2)
0 to 0.02
4: Emitter (Tr2) 5: Base (Tr2) 6: Collector (Tr1) SSMini6-F1 Package
Internal Connection
Absolute Maximum Ratings Ta = 25C
Parameter Collector to base voltage Collector to emitter voltage Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO IC PT Tj Tstg Rating 50 50 100 125 125 -55 to +125 Unit V V mA mW C C
6 R1 Tr1 R2 1
5 R2
4
Tr2 R1 2 3
Electrical Characteristics Ta = 25C 3C
Parameter Collector to base voltage Collector to emitter voltage Collector cutoff current Symbol VCBO VCEO ICBO ICEO Emitter cutoff current UP04211 UP04214 UP04213 UP04210/4215/4216 Forward current UP04211 UP04213/4214 IC = 10 mA, IB = 0.3 mA hFE VCE = 10 V, IC = 5 mA 35 80 160 VCE(sat) 460 0.25 V IEBO Conditions IC = 10 A, IE = 0 IC = 2 mA, IB = 0 VCB = 50 V, IE = 0 VCE = 50 V, IB = 0 VEB = 6 V, IC = 0 Min 50 50 0.1 0.5 0.5 0.2 0.1 0.01 mA Typ Max Unit V V A
transfer ratio UP04210/4215/4216 Collector to emitter saturation voltage
0.10 max.
5
0.550.05
Resistance by Part Number
(0.20)
(0.20)
Publication date: June 2002
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UP04210/4211/4213/4214/4215/4216
Electrical Characteristics (continued) Ta = 25C 3C
Parameter High-level output voltage Low-level output voltage UP04213 Input resistance UP04216 UP04211/4214/4215 UP04210/4213 Resistance ratio UP04211/4213 UP04214 fT VCB = 10 V, IE = -2 mA, f = 200 MHz R1 / R2 0.8 0.17 R1 Symbol VOH VOL Conditions VCC = 5 V, VB = 0.5 V, RL = 1 k VCC = 5 V, VB = 2.5 V, RL = 1 k VCC = 5 V, VB = 3.5 V, RL = 1 k -30% 4.7 10 47 1.0 0.21 150 1.2 0.25 MHz +30% k Min 4.9 0.2 Typ Max Unit V V
Gain bandwidth product
Common characteristics chart PT Ta
150
Total power dissipation PT (mW)
125
100
75
50
25
0 0 20 40 60 80 100 120 140 160
Ambient temperature Ta (C)
Characteristics charts of UP04210 IC VCE
Collector to emitter saturation voltage VCE(sat) (V)
120 IB = 1.0 mA 100 Ta = 25C 0.9 mA 0.8 mA 0.7 mA 0.6 mA 0.5 mA 0.4 mA 0.3 mA 60 0.2 mA 40 0.1 mA 10
VCE(sat) IC
IC / IB = 10
300
hFE IC
VCE = 10 V Ta = 75C
80
1
Forward current transfer ratio hFE
250
Collector current IC (mA)
200
25C
150
-25C
0.1
Ta = 75C 25C -25C
100
20
50
0
0
2
4
6
8
10
12
0.01 0.1
1
10
100
0 0.1
1
10
100
1 000
Collector to emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
2
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UP04210/4211/4213/4214/4215/4216
IO VIN
10 VO = 5 V Ta = 25C
VIN IO
100 VO = 0.2 V Ta = 25C
Output current IO (mA)
Input voltage VIN (V)
0 0.5 1.0 1.5 2.0 2.5
10
1
1
0.1
0.1
1
10
100
Input voltage VIN (V)
Output current IO (mA)
Characteristics charts of UP04211 IC VCE
IB = 1.0 mA 120 Ta = 25C 0.9 mA 0.8 mA 0.7 mA 0.6 mA 0.5 mA 0.4 mA 0.3 mA
VCE(sat) IC
Collector to emitter saturation voltage VCE(sat) (V)
1 IC / IB = 10
250
hFE IC
VCE = 10 V
140
Forward current transfer ratio hFE
Collector current IC (mA)
200
Ta = 75C 25C
100 80 60
Ta = 75C 0.1 25C
150
-25C
100
0.2 mA 40 20 0.1 mA 0 0 2 4 6 8 10 12
-25C
50
0.01
0
1
10
100
1 000
1
10
100
1 000
Collector to emitter voltage VCE
(V)
Collector current IC (mA)
Collector current IC (mA)
Cob VCB
10
IO VIN
f = 1 MHz Ta = 25C
VIN IO
VO = 5 V Ta = 25C
100
10
VO = 0.2 V Ta = 25C
Collector output capacitance Cob (pF)
Output current IO (mA)
1
1
Input voltage VIN (V)
1 1.2 1.4 1.6 1.8 2
10
1
0.1
0.1
0.01
0 5 10 15 20 25 30 35
0.1 0.1
1
10
100
Collector to base voltage VCB (V)
Input voltage VIN (V)
Output current IO (mA)
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UP04210/4211/4213/4214/4215/4216
Characteristics charts of UP04213 IC VCE
IB = 1.0 mA 0.9 mA 0.8 mA 120
VCE(sat) IC
Collector to emitter saturation voltage VCE(sat) (V)
Ta = 25C
10 IC / IB = 10
hFE IC
320 VCE = 10 V 280
140
Collector current IC (mA)
100 80 60 40
0.7 mA 0.6 mA 0.5 mA 0.4 mA 0.3 mA
Forward current transfer ratio hFE
Ta = 75C 25C
240 200 160 -25C 120 80 40
1
0.2 mA
0.1
Ta = 75C -25C 25C
0.1 mA 20 0
0
2
4
6
8
10
12
0.01 0.1
1
10
100
0 0.1
1
10
100
1 000
Collector to emitter voltage VCE
(V)
Collector current IC (mA)
Collector current IC (mA)
Cob VCB
10
100
IO VIN
f = 1 MHz Ta = 25C
VO = 5 V Ta = 25C
VIN IO
100 VO = 0.2 V Ta = 25C
Collector output capacitance Cob (pF)
Output current IO (mA)
10
Input voltage VIN (V)
0 2 4 6 8 10 12
10
1
1
1
0
5
10
15
20
25
30
35
40
0.1
0.1
0
1
10
100
Collector to base voltage VCB (V)
Input voltage VIN (V)
Output current IO (mA)
Characteristics charts of UP04214 IC VCE
Collector to emitter saturation voltage VCE(sat) (V)
140 Ta = 25C
VCE(sat) IC
1
0.9 mA 0.8 mA 0.7 mA 0.6 mA 0.5 mA 0.4 mA
hFE IC
300 VCE = 10 V Ta = 75C 25C 200
IC / IB = 10
100 80
Ta = 75C 0.1 25C -25C
0.3 mA 60 0.2 mA 40 20 0 0.1 mA
Forward current transfer ratio hFE
120 IB = 1.0 mA
250
Collector current IC (mA)
150
-25C
100
50
0
2
4
6
8
10
12
0.01
1
10
100
1 000
0 0.1
1
10
100
1 000
Collector to emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
4
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UP04210/4211/4213/4214/4215/4216
Cob VCB
10
IO VIN
100 VO = 5 V Ta = 25C
VIN IO
10 VO = 0.2 V Ta = 25C
Collector output capacitance Cob (pF)
f = 1 MHz Ta = 25C
Output current IO (mA)
Input voltage VIN (V)
10
1
1
0.1
1
0
5
10
15
20
25
0.01
0
0.5
1
1.5
2
2.5
0.1 0.1
1
10
100
Collector to base voltage VCB (V)
Input voltage VIN (V)
Output current IO (mA)
Characteristics charts of UP04215 IC VCE
Collector to emitter saturation voltage VCE(sat) (V)
140 IB = 1.0 mA 120 Ta = 25C 0.9 mA 0.8 mA 0.7 mA 0.6 mA 0.5 mA 0.4 mA 80 0.3 mA 60 0.2 mA 40 20 0 0.1 mA
1
VCE(sat) IC
IC / IB = 10
hFE IC
450 400 Ta = 75C VCE = 10 V
Forward current transfer ratio hFE
Collector current IC (mA)
350 300 250 200 150 100 50
100
25C
Ta = 75C 0.1 25C -25C
-25C
0.01
0
2
4
6
8
10
12
1
10
100
1 000
0
1
10
100
1 000
Collector to emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
Cob VCB
10
IO VIN
100 VO = 5 V Ta = 25C
VIN IO
10 VO = 0.2 V Ta = 25C
Collector output capacitance Cob (pF)
f = 1 MHz Ta = 25C
Output current IO (mA)
Input voltage VIN (V)
10
1
1
0
5
10
15
20
25
30
35
1
0.1
0 0.5 1 1.5 2 2.5
1
10
100
Collector to base voltage VCB (V)
Input voltage VIN (V)
Output current IO (mA)
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UP04210/4211/4213/4214/4215/4216
Characteristics charts of UP04216 IC VCE
Collector to emitter saturation voltage VCE(sat) (V)
140 IB = 1.0 mA 120 Ta = 25C 0.9 mA 0.8 mA 0.7 mA 0.6 mA 0.5 mA 0.4 mA 80 0.3 mA 60 0.2 mA 40 20 0 0.1 mA
VCE(sat) IC
1 IC / IB = 10
hFE IC
350 300 250 200 150 100 50 0 0.1 Ta = 75C 25C -25C VCE = 10 V
100
0.1 25C
Ta = 75C
-25C
0
2
4
6
8
10
12
0.01 0.1
1
10
100
Forward current transfer ratio hFE
Collector current IC (mA)
1
10
100
1 000
Collector to emitter voltage VCE
(V)
Collector current IC (mA)
Collector current IC (mA)
Cob VCB
10
IO VIN
f = 1 MHz Ta = 25C
100 VO = 5 V Ta = 25C
VIN IO
10 VO = 0.2 V Ta = 25C
Collector output capacitance Cob (pF)
Output current IO (mA)
10
1
Input voltage VIN (V)
0.6 0.8 1 1.2 1.4
1
1
0.1
0
5
10
15
20
25
30
35
0.1 0.4
0.1 0.1
1
10
100
Collector to base voltage VCB (V)
Input voltage VIN (V)
Output current IO (mA)
6
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Request for your special attention and precautions in using the technical information and semiconductors described in this book
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this book and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this book is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this book. (4) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.
2002 MAY

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